Wire Bonding

Thermosonic wire bonding cycle begins with the formation of a Free Air Ball (FAB), which is pressed onto an Integrated Circuit (IC) chip's bond pad to form a weld between the ball and the pad. As the bonded ball size affects the weld strength, the formation of a spherical and repeatable FAB size is important in wire bonding because it affects the bondability and consistency of the ball bond as well as its wire loop height.
IMAPS Taiwan 2006 Technical Symposium

Lead-free Sn-Ag based systems require higher peak reflow temperatures, as well as the elimination of bromine flame retardants from transfer moulding compounds. This article presents the results of a study conducted on the intermetallic growth of K&S gold ball bonding wires after high temperature storage on bare and encapsulated devices.

Presented at EPTC Singapore: Dec. 2005

Chip-to-substrate interconnections provide the electrical paths for power and signal distribution. The most common interconnect technology is wire bonding, specifically ball bonding. Currently responsible for more than 90% of today’s chip interconnects, ball bonding continues to grow at a phenomenal rate.

Published in Advanced Packaging Magazine: July 2005

When evaluating wire bonds, it may appear that the bonder, tool, or wire is producing weak bonds. In order to reach a valid conclusion, it is important to understand the data and the test conditions. The bonds may be weak, or the specs may need to be corrected after re-evaluating the process/test methods.

As presented at IMAPS 2005 Symposium on Advanced Packaging for Optical and Electronic Components

This study investigates the cryogenic drawing process of gold bonding wire. In this evaluation, gold of 99.99% purity was drawn in liquid nitrogen and room temperature, and the mechanical and electrical properties of both wires were then investigated.

Presented at EMAP '04, Penang, Malaysia, December 2004

Gold ball bonding is an enabling technology in electronics packaging that is used in 90% of packaged ICs. This paper examines the correlation between the wire properties (break load, modulus, hardness, grain size, HAZ length) and looping performance.

Presented at 6th EPTC, Pan Pacific Singapore, December 2004

In modern wire bonding machines, the ultrasonic system plays a crucial role in the determining bond quality.

Presented at SEMICON Singapore 2004, SEMI Technology Symposium: International Electronics Manufacturing Technology (IEMT) Symposium

Advanced packaging requirements for emerging semiconductor devices continue to present new challenges to the wire bond process. As an alternative to reducing pad pitch on high I/O applications, multi-tiered pad arrangements are typically found in production today with two, three or even four rows of bond pads.

As presented at SEMICON West 2004, IEEE/CPMT/SEMI 29th International Electronics Manufacturing Technology Symposium

New observations on intermetallic compound formation in gold ball bonds: general growth patterns and identification of two forms of Au4Al.

Published in Microelectronics Reliability (2004)

The 4N (99.99% Au) gold ball bonding on Al alloy pad metallization is widely used in microelectronic packaging assembly. The formation of intermetallics is an essential part of the wirebonding process that gives mechanical strength to the ball-pad interconnection.

Published in Thin Solid Films (2004)

CIC capillary design improves UFP bonding applications.

Published in DesignFax Magazine: July 2003

Understanding how the processing of gold bonding wires affects texture can enable better microstructural engineering of the wire properties for performance improvements.

Published in Journal of Materials Science Letters (2003)

Ball bond morphology has changed significantly in the past few years, driven by the trend toward finer pitch and denser packaging. Acceptance criteria need to be modified to reflect this condition.

Published in EPP Europe Jan/Feb 2003

Qualification of a new 40um pitch wire bonding process requires significant process improvements and evaluations demonstrating process capability and reliability.

Presented at SEMICON West 2003

It is commonplace in the semiconductor packaging industry to inspect wires and remove shorts by rework prior to molding, in order to maximize yield. This process creates technical and commercial challenges for ultra fine pitch devices, multiple layers of wires, and stacked die applications.

Presented at SEMICON West 2003

Many industry luminaries today debate what will be the interconnect technology of choice for semiconductor devices in the future. Is it going to be wire bonding or flip chip?

Published Feb. 2002 in Advanced Packaging Magazine

This paper investigates different interconnect technologies for stacked die applications, including forward and reverse ball bonding and wedge bonding.

Presented at SEMICON Singapore 2002

This paper reports results of recent experimental and theoretical work done on monitoring the progress and quality of ultrasonic bonds during the thermosonic wire bonding operation.

Presented at SEMICON Singapore 2002

Many of the components used extensively in today's handheld market are beginning to migrate from traditional leadd frame designs to non-leaded formats.

Presented at SEMICON West 2002

The inevitable decrease in pad pitch has lead to reduction in pad opening, 1st ball and wire diameter. The later presents several challenges in the I/C assembly process.

Presented at SEMICON Singapore 2002

Optoelectronic packages are classic hybrids with some new opto-mechanical variations.

Published in 2002

Advances in silicon technology allow semiconductor manufacturers to increase die size while maintaining or increasing the number of features per chip.

Presented at SEMICON Singapore 2001

Presented at SEMICON Singapore 2001