Copper exhibits significantly better conductivity than gold or aluminum, enabling better heat dissipation and increased power ratings with thinner wire diameters. Copper also possesses stronger mechanical properties compared to gold, for excellent ball neck strength and high loop stability during molding or encapsulation.
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Investigation of Factors Affecting Bonded Ball Hardness on Copper Wire Bonding
Published January 2006
Hong Meng Ho, Yee Chen Tan, Boon Hoe Toh, Jonathan Tan
Copper wire ball bonding has gained popularity recently due to its economic advantage and superior electrical performance. However, replacing gold wire with copper wire in the wie bond process does come with technical challenges. Over the ears, IC bond pad structure has been evolved to suit gold wire ball bonding. By nature, copper is harder than gold, hence replacing gold wire with copper wire will introduce hardness related issues.
IMAPS Taiwan 2006 Technical Symposium
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High Temperature Storage (HTS) Performance of Copper Ball Bonding Wires
Published December 2005
Saraswati, Ei Phyu Phyu Theint, D. Stephan, H. M. Goh, E. Pasamanero, D. R. M. Calpito, F. W. Wulff, & C. D. Breach
Copper is a naturally harder material than gold. The hardness of copper, and its
greater tendency to undergo strain and strain rate hardening, have created challenges in its widespread implementation for fine pitch ball bonding.
Presented at EPTC Singapore: Dec 2005
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Modeling Energy Transfer to Copper Wire for Bonding in an Inert Environment
Published December 2005
Hong Meng Ho, Jonathan Tan, Yee Chen Tan, Boon Hoe Toh & Pascal Xavier
Copper's reactive nature to oxygen means that Free Air Ball (FAB) formation is more crucial than in gold wire bonding processes. This paper explores the formation of copper FABs under various inert gas environments.
Presented at EPTC Singapore: Dec 2005
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Copper Ball Bonding Advances for Leading Edge Packaging
Published January 2005
Michael Deley and Lee Levine
The Graphic Processing Unit (GPU) represents the leading edge in assembly technology, eclipsing the Central Processing Unit (CPU) as the most challenging semiconductor device. This paper will explore ways in which GPUs are advancing the state-of -the–art in assembly.
Presented at Semi Technology Symposium during SEMICON Singapore 2005
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Enhancing Fine Pitch, High I/O Devices with Copper Ball Bonding
Published January 2005
Inderjit Singh (nVidia Corporation); J.Y. On (ASE); Lee Levine (Kulicke & Soffa)
The Graphic Processing Unit (GPU) represents the leading edge in assembly technology. The use of copper ball bonding in ultra-fine pitch applications such as GPUs is a new and challenging development.
As presented at 2005 Electronic Components and Technology Conference
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Further Characterisation of Intermetallic Growth in Copper and Gold Ball Bonds on Aluminium Metallisation
Published January 2005
Frank W. Wulff, Christopher Breach, et al.
While the characterisation of intermetallic coverage and intermetallic phase (IP) growth in gold ballbonds on aluminium is quite well understood, there is relatively little literature concerning the morphology and growth of IP’s in Cu balls bonded on aluminium pad metallisation.
Presented at Semi Technology Symposium during SEMICON Singapore 2005
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Tail Pull Strength of Cu Wire on Gold and Silver-plated Bonding Leads
Published January 2005
John Beleran, Alejandro Turiano, Dodgie R.M. Calpito, Dominik Stephan, Saraswati, Frank Wulff, C Breach
There is growing interest in Cu wire bonding for IC interconnection based on potential cost savings and higher reliability. Copper has been used in discrete devices at larger diameters (>38µm) for many years. However, when implementing copper ball bonding in fine and ultra-fine applications, there are inherent problems that are proving difficult to resolve.
Presented at Semi Technology Symposium during SEMICON Singapore 2005
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Characterisation of Intermetallic Growth in Copper and Gold Ball Bonds on Aluminium Metallisation
Published December 2004
F. W. Wulff, C. D. Breach, D. Stephan, Saraswati and K.J. Dittmer
While the characterisation of intermetallic coverage and intermetallic phase (IP) growth in gold ball bonding on aluminium is quite well understood, there is relatively little literature concerning the morphology and growth of IP’s between Cu balls bonded on aluminium pad metallisation.
Presented at 6th EPTC, Pan Pacific Singapore: Dec. 2004
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The Future is Copper
Published December 2004
Hans Martin Buschbeck
Copper's share of the bonding wire market is poised for rapid growth in the coming years.
Published in European Semiconductor Dec 2004/Jan 2005
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Modelling of Free Air Ball for Copper Wire Bonding
Published January 2004
Jonathan Tan, Boon Hoe Toh and Hong Meng Ho
Copper wire ball bonding has gained considerable attention due to its economic advantage, strong resistance to sweeping and superior electrical performance. In order to have a good first bond, consistent free air-ball formations for copper bonding are even more crucial than they are in the gold wire process.
Presented at EPTC 2004, Singapore
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The Emergence of High Volume Copper Ball Bonding
Published January 2004
Michael Deley and Lee Levine
Presently, copper ball bonding is a fully qualified established production process for low I/O and power packages. As manufacturers gain production experience and infrastructure is established, copper ball bonding will present less risk.
Presented at SEMICON West 2004
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