Improved IC performance and reduced costs are key drivers in low-k technology's growing momentum. Low-k films support higher circuit speeds and enable smaller feature sizes by increasing the insulation capability around copper interconnects. Wire bonding over active circuitry (BOAC) on copper/low-k metallization layers improves utilization of available silicon space.
However, these new materials have substantially weaker mechanical properties and reduced thermal conductivity compared to previous generations of silicon-dioxide dielectric layers. Successful wire bonding to low-k devices requires optimization of impact forces and ultrasonic energy.