Low-K Dicing and Wire Bonding
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Low-K Dicing and Wire Bonding
The insulating capability of low-K materials offers many advantages for fine pitch applications that require increased speed and functionality,  but there are also challenges to consider when wire bonding on fragile cu/low-k devices.
Improved IC performance and reduced costs are key drivers in low-k technology's growing momentum. Low-k films support higher circuit speeds and enable smaller feature sizes by increasing the insulation capability around copper interconnects. Wire bonding over active circuitry (BOAC) on copper/low-k metallization layers improves utilization of available silicon space.
However, these new materials have substantially weaker mechanical properties and reduced thermal conductivity compared to previous generations of silicon-dioxide dielectric layers. Successful wire bonding to low-k devices requires optimization of impact forces and ultrasonic energy.
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